Work

Role of source/drain junction on plasma induced gate charging damage in N MOSFET

Year: 2002

Type: conference-paper

Source: International Symposium on Plasma Process-Induced Damage

DOI: 10.1109/ppid.2001.929991

Authors: W. Lin, G. Sery

Institution: Intel (United States)

Language: English

Topic: Electrostatic Discharge in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1663128408

FWCI: 1.423

Cites:

Cited by: 15

Related to: 10