Year: 2004
Type: article
Abstract: Zn1-x Cd x Se epilayers were grown on (100) GaAs substrates by molecular beam epitaxy. Lattice constants of the epilayers were measured by (004) rocking curve X-ray diffraction. A full width at half maximum of 475 to 2100 arcsec was obtained. The dependence of the energy gap on temperature, measured by the photoluminescence (PL) spectra, was fitted by Varshni's [Y. P. Varshni: Physica 34 149 (1967)] and O'Donnell's [R. P. O'Donnell and X. Chen: Appl. Phys. Lett. 58 2924 (1991)] models. The fitting parameters β (161 K to 368 K) and <hν> (13 meV to 24 meV), related to phonon energy, were obtained from Varshni and O'Donnell fits, respectively. The activation energies calculated from the integrated PL intensity versus inverse temperature decrease as the Cd content increases. The broadening of the PL linewidth with temperature was fitted by Γ(T)=Γ0+Γa T+ΓLO1/[exp (\hbarωLO1/k T)-1]+ΓLO2/[exp (\hbarωLO2/k T)-1]+Γiexp (-<E b>/k T). The impurity binding energy, <E b>, was found to decrease as the Cd composition increases.
DOI: 10.1143/jjap.43.5145
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1668090695