Work

Impact of inter metal dielectric on the reliability of SiGe NPN HBTs after high temperature electrical operation

Year: 2003

Type: conference-paper

Source: IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

DOI: 10.1109/smic.2003.1196686

Authors: K. Hoftnann, G. Bruegmann, M. Seck

Institution: Infineon Technologies (Germany)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1720028027

FWCI: 1.794

Cites: 9

Cited by: 6

Related to: 10