Direct Bonding between InP and Gd3Ga5O12 for Integrating Semiconductor and Magnetooptic Devices
Year: 1995
Type: article
DOI: 10.1143/jjap.34.510
Institution: Tokyo Institute of Technology
Language: English
Topic: 3D IC and TSV technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1721755880