Work

Verification of significant parameters in the deep-submicron MOS-FET simulation

Year: 2013

Type: conference-paper

Source: International Conference on Experience of Designing and Applications of CAD Systems in Microelectronics

Authors: S. Viktor, Tim Tuan, B. Artur

Institution: Belarusian State University of Informatics and Radioelectronics

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1817662464

FWCI:

Cites: 6

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Related to: 10