Work

Enhancement effect of short-circuit currents of Si solar cells with inclusion of indium tin oxide layers on metal–semiconductor interfaces

Year: 2015

Type: article

Abstract: We investigated the enhancement effect on short-circuit currents by indium tin oxide contact layers imbedded in metal–semiconductor interfaces in Si solar cells. Both samples that incorporate the thin film layer and the crossed finger lines of indium tin oxide exhibit an enhancement of p–n junction photocurrents and depletion capacitances with enhanced bulk donor concentrations at the emitter contacts. The indium tin oxide layer provides the passivation layer on the Si emitter surface with reduced trap states and the carrier transport layer for charge collection. The Si solar cells with indium tin oxide showed improved performance in shunt resistance and short-circuit current.

Source: Japanese Journal of Applied Physics

DOI: 10.7567/jjap.54.100306

Authors: Hyung Yong Ji, Bhaskar Parida, Seungil Park, Myeong Jun Kim, Sang Jo Chung, Keunjoo Kim

Institutions: Jeonbuk National University, Korea Institute of Industrial Technology

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: bronze