Effects of post metallization annealing on modulation in effective work function of platinum gate electrode in germanium metal‐oxide‐semiconductor devices
Year: 2012
Type: article
Source: Surface and Interface Analysis
DOI: 10.1002/sia.4969
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1925452205
