In situspectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects
Year: 2015
Type: article
Abstract: Combined in situ x-ray photoemission spectroscopy, scanning tunneling spectroscopy, and angle resolved photoemission spectroscopy of molecular beam epitaxy grown ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$ on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counterdoping. We observe that the surface morphology and electronic band structure of ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$ are not affected by in vacuo storage and exposure to oxygen, whereas major changes are observed when exposed to ambient conditions. These films help define a pathway towards intrinsic topological devices.
Source: Physical Review B
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1928068147