Influence of Substrate Biasing on the Structural and Electrical Properties of Sputtered Zirconia Thin Films
Year: 2009
Type: article
Abstract: ZrOx thin films were deposited by sputtering a pure zirconia target under argon–oxygen atmosphere and soft conditions: low substrate temperature and applied power. An anode biasing was added for different time durations in order to modify the substrate/layer interface. Auger profiling showed a sub‐stochiometric character that increases with the ion bombardment. The latter treatment led to the formation of an oxygen rich interface. XPS analysis revealed that all the zirconium was bonded to oxygen. Moreover, using the energy loss from the O 1s photoelectron signal, the optical band gap was found to increase with the biasing time. Capacitance–voltage measurement showed a high dielectric constant for all the deposits and defect formation in the film bulk when the ion bombardment was added during the layer growth.
Source: Plasma Processes and Polymers
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1963753063