Work

40 Gbit/s electroabsorption modulators with 1.1 V driving voltage

Year: 2004

Type: article

Source: Electronics Letters

DOI: 10.1049/el:20045968

Authors: H. Fukano, T. Yamanaka, M. Tamura, H. Nakajima, Y. Akage, Y. Kondo, T. Saitoh

Institution: NTT (Japan)

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1963902852

FWCI: 2.533

Cites: 6

Cited by: 15

Related to: 10