Transmission electron microscope observation of dark-spot defects in InGaAsP/InP double-heterostructure light-emitting diodes aged at high temperature
Year: 1980
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.91469
Institution: Fujitsu (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1964073705