Emission wavelength dependence of characteristic temperature of InGaN laser diodes
Year: 2013
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4818576
Institutions: Institute of High Pressure Physics, TopGaN (Poland)
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1964075475