High-modulation efficiency silicon Mach-Zehnder optical modulator based on carrier depletion in a PN Diode
Year: 2009
Type: article
Abstract: We present a high phase-shift efficiency Mach-Zehnder silicon optical modulator based on the carrier-depletion effect in a highly-doped PN diode with a small waveguide cross-sectional area. The fabricated modulator show a V(pi)L(pi) of 1.8 V x cm and phase shifter loss of 4.4 dB/mm. A device using a 750 microm-long phase-shifter exhibits an eye opening at 12.5 Gbps with an extinction ratio of 3 dB. Also, an extinction ratio of 7 dB is achieved at 4 Gbps for a device with a 2 mm-long phase shifter. Further enhancement of the extinction ratio at higher operating speed can be achieved using a travelling-wave electrode design and the optimal doping.
Source: Optics Express
DOI: 10.1364/oe.17.015520
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,270
OpenAlex ID: W1964078097