Improved device structure of quantum dot gate FET to obtain more stable intermediate state
Year: 2012
Type: article
Source: Electronics Letters
DOI: 10.1049/el.2012.3726
Authors: S. Karmakar, M. Gogna, F.C. Jain
Institution: University of Connecticut
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1964090621