Impact ionisation ratio in In 0.73 Ga 0.27 As 0.57 P 0.43
Year: 1978
Type: article
Source: Electronics Letters
DOI: 10.1049/el:19780281
Institution: Fujitsu (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1964101202
