Bottom cell growth aspects for triple junction InGaP/(In)GaAs/Ge solar cells
Year: 2005
Type: article
Source: Crystal Research and Technology
Authors: G. Timò, C. Flores, R. Campesato
Institution: CESI (Italy)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1964444359
