Microstructure and Light-Scattering Properties of ZnO:Al Films Prepared Using a Two-Step Process through the Control of Oxygen Pressure
Year: 2010
Type: article
Abstract: ZnO:Al films were prepared using a two-step process involving the control of oxygen pressure. The seed layers were deposited under various Ar to oxygen pressure ratios, and the bulk layers were prepared under pure Ar. The growth mode was systematically examined and clearly different microstructures were shown according to the deposition condition of the seed layer. With increase of oxygen pressure, the crystallinity and the degree of (002) texturing increased. The haze values of etched films also increased with increasing oxygen pressure, which was explained by the grain-structure of as-deposited films.
Source: Applied Physics Express
Authors: Taeho Moon, Wonki Yoon, Kwang Sun Ji, Seh-Won Ahn, Sungeun Lee, Minho Joo, Hui Youn Shin, Kyuho Park, Heon-Min Lee
Institution: LG (South Korea)
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
Funder: Ministry of Knowledge Economy
Award: G4033231836
OpenAlex ID: W1964616626
