Work

Spectroscopic ellipsometry analysis of GaAs1−xNx layers grown by molecular beam epitaxy

Year: 2007

Type: article

Source: Materials Science and Engineering C

DOI: 10.1016/j.msec.2007.10.008

Authors: N. Ben Sedrine, J. Rihani, J.L. Stehle, J.C. Harmand, R. Chtourou

Institutions: Research and Technology Center of Energy, Sopra (France), Centre National de la Recherche Scientifique

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1964786108

FWCI: 1.059

Cites: 27

Cited by: 10

Related to: 10