Work

Novel degradation model of MOSFET thin gate oxide induced by VUV photons during high density plasma oxide deposition

Year: 2012

Type: article

Source: Surface and Coatings Technology

DOI: 10.1016/j.surfcoat.2012.04.074

Authors: Moojin Kim, Jeongyun Lee, Dongkwon Kim, Gyungjin Min

Institutions: Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1964847005

FWCI:

Cites: 6

Cited by: 3

Related to: 10