Work

Growth of InP directly on Si by corrugated epitaxial lateral overgrowth

Year: 2015

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/0022-3727/48/4/045102

Authors: Wondwosen Metaferia, Himanshu Kataria, Yan-Ting Sun, Sebastian Lourdudoss

Institution: KTH Royal Institute of Technology

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1964995013

FWCI: 0.863

Cites: 27

Cited by: 29

Related to: 10