Work

Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

Year: 2002

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.1470223

Authors: E.-M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, M. Dumitrescu, S. Spânulescu

Institutions: Valahia University of Targoviste, Tampere University of Technology, University of Bucharest

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1965046469

FWCI: 7.795

Cites: 17

Cited by: 70

Related to: 10