Work

Front-back gate coupling effect on 1/f noise in ultra-thin Si film FDSOI MOSFETs

Year: 2012

Type: conference-paper

Source: International Semiconductor Conference Dresden-Grenoble (ISCDG)

DOI: 10.1109/iscdg.2012.6360011

Authors: C. G. Theodorou, E. G. Ioannidis, S. Haendler, N. Planes, F. Arnaud, F. Andrieu, T. Poiroux, O. Faynot, J. Jomaah, C. A. Dimitriadis, G. Ghibaudo

Institutions: Aristotle University of Thessaloniki, Micro and Nanotechnology Innovation Centre, Institut de Microélectronique, Electromagnétisme et Photonique, Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes, STMicroelectronics (France), Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: European Social Fund

OpenAlex ID: W1965666792

FWCI: 1.625

Cites: 8

Cited by: 10

Related to: 10