Year: 2010
Type: article
Abstract: We report bulk-quality n-type SrTiO3 (n-SrTiO3) thin films fabricated by pulsed laser deposition, with electron mobility as high as 6600 cm2 V−1 s−1 at 2 K and carrier density as low as 2.0×1018 cm−3 (∼0.02 at. %), far exceeding previous pulsed laser deposition films. This result stems from precise strontium and oxygen vacancy defect chemistry management, providing a general approach for defect control in complex oxide heteroepitaxy.
Source: Applied Physics Letters
DOI: 10.1063/1.3457994
Authors: Y. Kozuka, Y. Hikita, C. Bell, H. Y. Hwang
Institutions: The University of Tokyo, Japan Science and Technology Agency
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1965992188