Work

MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

Year: 2009

Type: article

Abstract: The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack reached 67% at annealing temperature (Ta) of 200 °C and then decreased rapidly at Ta over 250 °C. The degradation of the TMR ratio may be related to crystallization of CoFe(B) into fcc(111) or bcc(011) texture resulting from diffusion of B into Pd layers. MTJs which were in situ annealed at 350 °C just after depositing bottom CoFe/Pd multilayer showed TMR ratio of 78% by postannealing at Ta=200 °C.

Source: Applied Physics Letters

DOI: 10.1063/1.3265740

Authors: K. Mizunuma, S. Ikeda, J. H. Park, H. Yamamoto, H. Gan, K. Miura, H. Hasegawa, J. Hayakawa, F. Matsukura, H. Ohno

Institutions: Tohoku University, Research Institute of Electrical Communication, Tohoku University, Hitachi (Japan)

Language: English

Topic: Magnetic properties of thin films

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1966200455

FWCI: 8.721

Cites: 23

Cited by: 140

Related to: 10