Work

Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes

Year: 2007

Type: article

Source: Diamond and Related Materials

DOI: 10.1016/j.diamond.2007.01.016

Authors: M. Brezeanu, T. Butler, N.L. Rupesinghe, G.A.J. Amaratunga, S.J. Rashid, F. Udrea, M. Avram, G. Brezeanu

Institutions: University of Cambridge, National Institute for Research and Development in Microtechnologies, Universitatea Națională de Știință și Tehnologie Politehnica București

Language: English

Topic: Diamond and Carbon-based Materials Research

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1966200649

FWCI: 0.736

Cites: 12

Cited by: 15

Related to: 10