Year: 2012
Type: article
Abstract: Improvements of the internal quantum efficiency by reduction of the threading dislocation density and of the light extraction by using UV transparent p-type cladding and contact layers, UV reflecting ohmic contact, and chip encapsulation with optimized shape and refractive index allowed us to obtain the external quantum efficiency of 10.4% at 20 mA CW current with the output power up to 9.3 mW at 278 nm for AlGaN-based deep-ultraviolet light-emitting diodes grown on sapphire substrates.
Source: Applied Physics Express
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
Funder: Army Research Laboratory
Award: G5259331294
OpenAlex ID: W1966201972