Year: 1978
Type: article
Abstract: The nonlinearity measurement technique described uses an adapted conventional lock‐in‐amplifier. This technique enables us to measure small nonlinearities over a wide frequency band and is more sensitive than the 1/f noise measurement used to detect non‐homogeneous structures in conductors, resistors and semiconductor components. Results illustrating uses of this method are presented for different types of resistor and semiconductor structures.
DOI: 10.1155/apec.5.91
Authors: Vladimír Ryšánek, Carlo Corsi, Arnaldo d′Amico
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $1,000
OpenAlex ID: W1966523232
