Work

Theoretical study of polarization-doped GaN-based light-emitting diodes

Year: 2011

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.3565173

Authors: L. Zhang, K. Ding, N. X. Liu, T. B. Wei, X. L. Ji, P. Ma, J. C. Yan, J. X. Wang, Y. P. Zeng, J. M. Li

Institution: Chinese Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1966644239

FWCI: 7.209

Cites: 15

Cited by: 62

Related to: 10