Work

Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes

Year: 2008

Type: article

Source: Microelectronic Engineering

DOI: 10.1016/j.mee.2008.10.015

Authors: S. Toumi, A. Ferhat-Hamida, L. Boussouar, A. Sellai, Z. Ouennoughi, H. Ryssel

Institutions: University Ferhat Abbas of Setif, Sultan Qaboos University, Friedrich-Alexander-Universität Erlangen-Nürnberg

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1966706649

FWCI: 0.388

Cites: 66

Cited by: 53

Related to: 10