Work

Germanium vertical Tunneling Field-Effect Transistor

Year: 2011

Type: article

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2011.03.011

Authors: D. Hähnel, M. Oehme, M. Sarlija, A. Karmous, M. Schmid, J. Werner, O. Kirfel, I. Fischer, J. Schulze

Institution: University of Stuttgart

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1968149142

FWCI: 0.866

Cites: 11

Cited by: 12

Related to: 10