Work

Diffusion annealing of Mo/MoSi2 couple and silicon diffusivity in Mo5Si3 layer

Year: 2007

Type: article

Source: Materials Science and Engineering A

DOI: 10.1016/j.msea.2007.01.026

Authors: H.A. Chatilyan, S.L. Kharatyan, A.B. Harutyunyan

Institutions: Institute of Chemical Physics NAS RA, Yerevan State University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1968225219

FWCI: 1.228

Cites: 10

Cited by: 36

Related to: 10