Work

Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates

Year: 2003

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(03)01359-9

Authors: S.V. Novikov, L.X. Zhao, A.J. Winser, M.J. Kappers, J.S. Barnard, I. Harrison, C.J. Humphreys, C.T. Foxon

Institutions: University of Nottingham, University of Cambridge

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Engineering and Physical Sciences Research Council

OpenAlex ID: W1968314448

FWCI: 0.754

Cites: 8

Cited by: 3

Related to: 10