Work

Gate quality Si3N4/Si/n-In0.53Ga0.47As metal-insulator-semiconductor capacitors

Year: 1992

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.108387

Authors: Z. Wang, D. S. L. Mui, A. L. Demirel, D. Biswas, J. Reed, H. Morkoç

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1968413664

FWCI: 2.781

Cites: 9

Cited by: 19

Related to: 9