Work

Simulations of arsenic and boron co-implanted in silicon during RTA for ultra-shallow junctions realizations

Year: 2005

Type: article

Source: Materials Science and Engineering B

DOI: 10.1016/j.mseb.2005.08.021

Author: A. Merabet

Institution: University Ferhat Abbas of Setif

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1968635258

FWCI:

Cites: 12

Cited by: 1

Related to: 10