High Speed Selective-Area-Epitaxial Ge-on-SOI PIN Photo-detector Using Thin Low Temperature Si0.8Ge0.2 Buffer by Ultra-High-Vacuum Chemical Vapor Deposition
Year: 2007
Type: conference-paper
Institution: Institute of Microelectronics
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1968704368
