Work

Gate-controlled spin polarized current in ferromagnetic single electron transistors

Year: 2002

Type: article

Abstract: Gate voltage can be used to tune polarization of current passing through a ferromagnetic single electron transistor when spin accumulate in the central electrode. The shift in spin chemical potential acts as charge offset in the island and alternates the gate dependence of spin current. We demonstrate this phenomenon by applying master equation calculations to ferromagnetic/normal metal/ferromagnetic single electron transistors. Taking advantage of this effect, one can use ferromagnetic single electron transistors as a tunable current polarizer.

Source: Physical review. B, Condensed matter

DOI: 10.1103/physrevb.65.104427

Authors: Watson Kuo, C. D. Chen

Institutions: National Tsing Hua University, Institute of Physics, Academia Sinica

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1969010751

FWCI: 0.227

Cites: 17

Cited by: 18

Related to: 10