Prediction of large bias-dependent magnetoresistance in all-oxide magnetic tunnel junctions with a ferroelectric barrier
Year: 2011
Type: article
Abstract: All-oxide magnetic tunnel junctions (MTJs) incorporating functional materials as insulating barriers have the potential of becoming the founding technology for novel multifunctional devices. We investigate, by first-principles density functional theory, the bias-dependent transport properties of an all-oxide SrRuO${}_{3}$/BaTiO${}_{3}$/SrRuO${}_{3}$ MTJ. This incorporates a BaTiO${}_{3}$ barrier which can be found either in a nonferroic or in a ferroelectric state. In such an MTJ not only can the tunneling magnetoresistance reach enormous values, but also, for certain voltages, its sign can be changed by altering the barrier electric state. These findings pave the way for a new generation of electrically controlled magnetic sensors.
Source: Physical Review B
Institution: Trinity College Dublin
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W19692791