Si3N4/Si/In0.53Ga0.47As depletion-mode metal-insulator-semiconductor field-effect transistors with improved stability
Year: 1993
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.109075
Institution: University of Illinois Urbana-Champaign
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1969474148