Work

Influence of radiation damage on xenon diffusion in silicon carbide

Year: 2014

Type: article

Source: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

DOI: 10.1016/j.nimb.2014.02.109

Authors: E. Friedland, K. Gärtner, T.T. Hlatshwayo, N.G. van der Berg, T.T. Thabethe

Institutions: University of Pretoria, Friedrich Schiller University Jena

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1971551923

FWCI: 1.239

Cites: 11

Cited by: 19

Related to: 10