Work

Summary Abstract: Passivation of InP by plasma deposited phosphorus: Effects of surface treatment

Year: 1986

Type: article

Source: Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

DOI: 10.1116/1.583555

Authors: R. Schachter, M. Viscogliosi, L. A. Bunz, D. J. Olego, H. B. Serreze, P. M. Raccah

Institution: University of Illinois Chicago

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1972227554

FWCI: 1.052

Cites:

Cited by: 2

Related to: 10