Work

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Year: 2012

Type: conference-paper

Source: International Photonics and Optoelectronics Meetings

DOI: 10.1364/iont.2012.ith4a.06

Authors: Y. Li, S. C. Chen, W. Tian, S. L. Li, H. Wang, J. Zhang, Z. H. Wu, Y. Y. Fang, J. N. Dai, C. Q. Chen

Institutions: Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1973132281

FWCI:

Cites: 2

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Related to: 10