Work

Structural properties of Ne implanted GaN

Year: 2008

Type: article

Source: Physica Scripta

DOI: 10.1088/0031-8949/77/03/035601

Authors: A Majid, A Ali, J J Zhu, W Liu, G J Lu, W B Liu, L Q Zhang, Z S Liu, H Wang, D G Zhao, S M Zhang, D S Jiang, Y T Wang, H Yang, M Israr

Institutions: Quaid-i-Azam University, Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

OpenAlex ID: W1973291353

FWCI: 0.429

Cites: 21

Cited by: 4

Related to: 10