High performance submicron pseudo-MODFETs and 2:1 multiplexers using GaAs on InP heteroepitaxial technology
Year: 1990
Type: article
Source: Electronics Letters
DOI: 10.1049/el:19900527
Authors: Y.H. Lo, M. Bagheri, P.S.D. Lin, P. Grabbe, R. Bhat, N.G. Stoffel, T.P. Lee, D.T. Kong
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1973408281
