Work

TEM analysis of an interface layer formed by the anti-surfactant treatment on a GaN template

Year: 2006

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2006.10.188

Authors: N. Kuwano, M. Hijikuro, S. Hata, M. Takeuchi, Y. Aoyagi

Institutions: Kyushu University, Tokyo Institute of Technology, RIKEN

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1973753166

FWCI: 0.243

Cites: 5

Cited by: 5

Related to: 10