Annealing Behavior of Donorlike Defects Induced by High-Fluence Irradiation of High-Energy Particles in p-Type Silicon
Year: 2003
Type: article
Abstract: The high-fluence irradiation of high-energy electrons or protons converts p-type conduction of B-doped Si into n-type conduction. This type conversion results from the formation of donorlike defects. Since the donorlike defects are completely annealed out at 523 K, one of the possible origins of the donorlike defects is a complex of interstitial B and interstitial O. On the other hand, the hole concentration is reduced by irradiation less than by the fluence with which the type conversion occurs. Although this reduction is reported to arise from the creation of hole traps annealed out at >523 K, it is found that some of the defects can be annealed out at low temperatures similar to the anneal-out temperature of donorlike defects.
DOI: 10.1143/jjap.42.5187
Institution: Osaka Electro-Communication University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1975855242