Design and development of Low Noise Amplifier for RF/MW Receiver
Year: 2012
Type: article
Abstract: ABSTRACT LNA design is a crucial thing and challenging task at the receiver since received signal will always be weaker in amplitude and corrupted by noise in wireless communications. It should provide low noise figure not only at one frequency but over range of frequencies or bandwidth of interest. Also requirements of minimum noise figure and maximum gain will always be design trade-offs and can’t be met simultaneously. We need an optimization and fine tuning of component values to get the optimum results. For radio astronomy applications, it’s desirable to have wider bandwidth, low noise figure and good gain. Some-times we need to sacrifice gain for bandwidth. High electron mobility transistor (HEMT) plays a crucial role and is extensively used in ultra low noise amplifiers. We have designed two stage LNA at the centre frequency of 1.5GHz and achieved bandwidth of around 1.2GHz while maintaining noise figure of 0.54 dB, unconditional stability and gain of 25dB using AWR Microwave Office software.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W1976547293