The Physicochemical Properties and Growth Mechanism of Oxide ( SiO2 − x F x ) by Liquid Phase Deposition with H 2 O Addition Only
Year: 1994
Type: article
Abstract: Silicon oxide formation was studied by a novel liquid phase deposition (LPD) method with addition only at 35°C. The deposition rate could be controlled by varying the quantity of added. The LPD‐oxide was lightly oxygen‐deficient. FTIR spectra and AES depth profiles indicate that a small amount of fluorine was incorporated into the oxide. The composition of LPD‐oxide can be represented as . The physicochemical properties of LPD oxide were investigated, as was the behavior of fluorine in the oxide and the chemical reaction. A model for the LPD mechanism is proposed that satisfactorily explains all of the experimental phenomena observed.
DOI: 10.1149/1.2059298
Authors: Ching‐Fa Yeh, Chun‐Lin Chen, Guan‐Hong Lin
Institution: National Yang Ming Chiao Tung University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
Funder: National Science Council
OpenAlex ID: W1978255270