Year: 2005
Type: article
Abstract: Linear sweep voltammetry and chronoamperometry methods were used to measure limiting current in an industrial wafer-plating cell. Copper deposition in a dilute solution, under mass-transfer-limited conditions, is used to study the variation of the mass transfer boundary-layer thickness. It is shown that a shear-plate fluid agitation mechanism is capable of generating a thin ( i.e. , ), spatially uniform and nonperiodic boundary layer across the entire wafer. It is anticipated that thin boundary layer deposition will prove to be beneficial in MEMS, flip-chip bumping, and WL-CSP applications.
DOI: 10.1149/1.1874674
Authors: B. Q. Wu, Z. Liu, A. Keigler, J. Harrell
Language: English
Subfield: Surfaces, Coatings and Films
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1978295752