Work

Characterization of defect density created by stress in the gate to drain overlap region using GIDL current model in n-channel MOSFET

Year: 2010

Type: article

Source: Journal of Computational Electronics

DOI: 10.1007/s10825-010-0310-2

Authors: N. Maouhoub, K. Rais

Institution: Chouaib Doukkali University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1978297624

FWCI:

Cites: 9

Cited by: 2

Related to: 10