Work

Investigation of theDXcenter in heavily dopedn-GaAs

Year: 1987

Type: article

Source: Physical Review Letters

DOI: 10.1103/physrevlett.59.815

Authors: D. K. Maude, J. C. Portal, L. Dmowski, T. Foster, L. Eaves, M. Nathan, M. Heiblum, J. J. Harris, R. B. Beall

Institutions: Centre National de la Recherche Scientifique, University of Nottingham, Institut National des Sciences Appliquées de Toulouse, IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1978354765

FWCI: 16.65

Cites: 14

Cited by: 148

Related to: 10